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IRVINE, Calif., Aug. 21, 2012 -- a committed leader that collaborates with technology companies to create breakthrough designs, today announced the introduction of the new TCX4A01WBG, a high-frequency power detection integrated circuit (IC) that uses Root Mean Square (RMS) detection for transmission power control in mobile phones.

The small circuit area of the new chip enables high efficiency operation for power amplifiers, and extends battery life – a key concern in the design of today's mobile phones. Toshiba's TCX4A01WBG features an ultra-small package (WCSP4), operating with only a coupling capacitor and a bypass capacitor.

The new power detection IC from Toshiba can extract a high accuracy detection voltage from even the most complex transmission signals – such as those used for 3G or newer phones - and is also suitable for PA power control. Additionally, the chip gives greater freedom in circuit design, which is especially important at a time when multiple bands and complex transmission signals are present due to an increase in data communication demands.

"Today's mobile phones require high-frequency power detection with a small circuit area. The ability to achieve a long battery life is one of the most pressing issues in the design of mobile phones, and has become a consumer expectation," noted Talayeh Saderi, business development engineer for TAEC.  "Because the power amplifier consumes considerable power in a mobile phone, having control for the power amplifier is essential."

Features include:

Extracts a high-accuracy detection voltage from even complex modulation signals
Uses Root Mean Square (RMS) detection
Single-power operation in the 2.5 to 3.3 V range
Low power consumption of 0.95 mW (typ.)
Ultra-small package WCSP (0.79 mm x 0.79 mm x 0.5 mm)
A small number of peripheral circuit parts: operates with only a coupling capacitor and a bypass capacitor
Suitable for UMTS, CDMA, WCDMA and LTE mobile phone technologies

Main Specifications

Parameter Symbol Measurement conditions Min Typ. Max Unit
Operating current Icc No input signal ____ 0.34 0.5 mA
Operating frequency f   700 ____ 2000 MHz
Error ER f=900MHz,Pin=-15 to 0dBm -0.3 ____ +0.3 dB
Dynamic range DR f=900MHz, Error ±1.0dB ____ 27 ____ dB
Conversion gain Gc f=900MHz, Pin=-15 to 0dBm 77 85 93 mV/dB
Error temperature factor KERROR f=900MHz, Pin=-5dBm, Ta=-25 to +85 degrees Celsius ____ -0.003 ____ dB/degrees Celsius